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Total 1799 products from transistor gate Manufactures & Suppliers |
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Brand Name:MMR Place of Origin:China ... Transistor (IGBT) is a general purpose transistor that is used in a variety of applications such as motor control, power conversion, and other industrial applications. It offers superior performance and high quality due to its insulated gate structure. |
MMR TECHNOLOGY HK LIMITED
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Brand Name:Infineon Model Number:IKW40N65H5 Place of Origin:Original ...Gate Bipolar Transistor Applications •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Specifications Product Attribute Attribute Value Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 650 V Collector-Emitter Saturation Voltage: 1.65 V Maximum Gate... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
Brand Name:Hua Xuan Yang Model Number:AOD403/AOI403 Place of Origin:ShenZhen China ...low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. Parameters Part Number ... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Unisonic Tech Model Number:12N80L Place of Origin:Taiwan ... Maximum Power Dissipation (Pd) 150 W Maximum Drain-Source Voltage |Vds| 800 V Maximum Gate-Source Voltage |Vgs| 30 V Maximum Gate-Threshold Voltage |Vgs(th)| 5 V Maximum Drain Current |Id| 12 A Maximum Junction Temperature (Tj) 150 °C |
HK HUAYONGLI ELECTRONIC INDUSTRIAL CO.,LIMTED.
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Brand Name:International Rectifier Model Number:IRG4PH50UD ...IRG4PH50UD can be a great choice. As a power MOSFET transistor, it's designed for high performance and efficiency in a range of applications. Here are some pros and cons to consider before you buy: Pros: - High power ratings, with a maximum Vds of ... |
Yougou Electronics (Shenzhen) Co., Ltd.
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Brand Name:General Electric Model Number:DS200IIBDG1AEA Place of Origin:United States ... that provide a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you |
N.S.E AUTOMATION CO., LIMITED
Fujian |
Model Number:FDS6699S Place of Origin:America Brand Name:Fairchild ... performance Trench technology for extremely low RDS (ON) and fast switching 5. High power and current handling capability 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of Channels 1 |
Shenzhen Res Electronics Limited
Guangdong |
Brand Name:Original brand Model Number:IRFB38N20DPBF Place of Origin:Original Manufacturer ...TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET Applications l High frequency DC-DC converters l TO-220 is available in PbF as Lead-Free Benefits l Low Gate... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:Silicon Labs Model Number:SI4463-C2A-GMR Place of Origin:Multi-origin ...Transistors Product Description: The SI4463-C2A-GMR RF Power Transistors are designed for use in high-efficiency, high-power wireless applications. These transistors are capable of producing up to 125W of peak power and up to 40W of average power with excellent linearity. They feature a high breakdown voltage of 200V, and a low gate... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:original Model Number:SN55451BJG Place of Origin:original SN55451BJG Driver IC Inverting Gate Drvr Low-Side 8cdip Low-Side Low-Side Gate Driver IC Inverting 8-CDIP Specifications of SN55451BJG TYPE DESCRIPTION Category Integrated Circuits (ICs) Power Management (PMIC) Gate Drivers Mfr Texas Instruments Series - ... |
SZ ADE Electronics Co., Ltd
Guangdong |
Brand Name:Original Factory Model Number:TW015N120C,S1F Place of Origin:CN ... in Switching Voltage Regulators. Specification Of TW015N120C,S1F Part Number: TW015N120C,S1F Qg - Gate Charge: 158 NC Vgs - Gate-Source Voltage: - 10 V, + 25 V Id - Continuous Drain Current: 100 A Rds On - Drain-Source Resistance: 182 MOhms ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Broadcom / Avago Model Number:ACFJ-3530T-500E ACFJ-3530T-500E 2.5A Gate Driver Capacitive Coupling 5000Vrms 1 Channel 24-SOIC Broadcom ACFJ-3530T Smart Gate Drive Optocouplers Broadcom ACFJ-3530T Smart Gate Drive Optocouplers feature integrated flyback controller for isolated DC-DC converter and IGBT ... |
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Brand Name:Texas Instruments Model Number:TPL7407LPWR Place of Origin:Malaysia ... of a single NMOS channel is 600 mA. New regulation and drive circuitry added to give maximum drive strength across all GPIO ranges (1.8 V – 5.0 V).The transistors can |
HAOXIN HK ELECTRONIC TECHNOLOGY CO. LIMITED
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Brand Name:Original Factory Model Number:BSZ100N03MSGATMA1 Place of Origin:China ...Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 40 A Fall Time: 2.4 Ns Transistor Type: 1 N-Channel Rds On - Drain-Source Resistance: 7.3 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 1 V Qg - |
Shenzhen Tengshengda ELECTRIC CO., LTD.
Guangdong |
Brand Name:REASUNOS Place of Origin:Guangdong, CN high Voltage MOS-Gate Transistor with Embedded FRD Product Description: High Voltage MOSFET is the Ultra-high Voltage MOS-Gate Transistor with Embedded FRD, which is type N. It is widely used in motor series, inverter, half-bridge/full bridge circuit ... |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
Brand Name:onsemi Model Number:ATP114-TL-H Place of Origin:United States ATP114-TL-H P-Channel 60 V 55A (Ta) 60W (Tc) Surface Mount ATPAK Features:ATP114-TL-H Category Single FETs, MOSFETs Mfr onsemi FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 55A... |
Shenzhen Zhaocun Electronics Co., Ltd.
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Brand Name:ABB Model Number:FS450R17KE3/AGDR-71C S Place of Origin:SWEDEN Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *... |
Wuhan Sean Automation Equipment Co.,Ltd
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Brand Name:INFINEON Model Number:SAK-TC387QP-160F300S AE Place of Origin:Original Brand ...Transistor Sak-tc387qp Sak-tc387qp-160f300s Ae Tc387qp-160f300s Electronics Components A MOSFET (metal-oxide-semiconductor field-effect transistor) is a type of transistor that is commonly used in electronic circuits as a switching device. It is a three-terminal device that consists of a gate... |
DINGCEN INTERNATIONAL (HK) LIMITED
Guangdong |
Brand Name:TI Model Number:UCC5350MCDR Place of Origin:USA ..., and GaN FETs (UCC5350SBD). The UCC53x0S provides a split output that controls the rise and fall times individually. The UCC53x0M connects the gate of the transistor to an internal clamp to prevent false turnon caused by Miller current. The UCC53x0E has |
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
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Brand Name:onsemi Model Number:BSS138 Place of Origin:China ... Drain Current Id: 220mA Drain Source On State Resistance: 3.5ohm Transistor Case Style: SOT-23 Transistor Mounting: Surface Mount Rds(on) Test Voltage: 10V Gate Source Threshold Voltage Max: 1.3V Power Dissipation: 360mW No. of Pins: 3Pins Operating ... |
Shenzhen Wonder-Chip Electronics Company Limited
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